bcx17 ? pnp general-purpose amplifier ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bcx17 rev. 1.1.0 1 march 2014 bcx17 pnp general-purpose amplifier ordering information absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t c = 25c unless otherwise noted. part number marking package packing method bcx17 t1 sot-23 3l tape and reel symbol parameter value unit v ceo collector-emitter voltage -45 v v cbo collector-base voltage -50 v v ebo emitter-base voltage -5 v i c collector current - continuous -500 ma t j , t stg junction and storage temperature range -55 to +150 c description this device is designed for general-purpose amplifiers and switching applications at currents to 0.5 a. sourced from process 78. sot-23 1. base 2. emitter 3. collector 1 2 3 mark: t1
bcx17 ? pnp general-purpose amplifier ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bcx17 rev. 1.1.0 2 thermal characteristics values are at t a = 25c unless otherwise noted. note: 1. alumina = 0.4 inch x 0.3 inch x 0.024 inch 9.5% alumina. electrical characteristics values are at t c = 25c unless otherwise noted. symbol parameter max. unit p d total device dissipation: alumina substrate, t a = 25c (1) 300 mw derate above t a = 25c 2.4 mw/c r ja thermal resistance, junction to ambient 417 c/w symbol parameter conditions min. max. unit v (br)ceo collector-emitter breakdown voltage i c = -10 ma, i b = 0 -45 v v (br)ces collector-emitter breakdown voltage i c = -10 a, i e = 0 -50 v i cbo collector cut-off current v cb = -20 v, i e = 0 -100 na v cb = -20 v, i e = 0, t a = 150c -5 a i ebo emitter cut-off current v eb = -5.0 v, i c = 0 -10 a h fe dc current gain i c = -100 ma, v ce = -1.0 v 100 600 i c = -300 ma, v ce = -1.0 v 70 i c = -500 ma, v ce = -1.0 v 40 v ce (sat) collector-emitter saturation voltage i c = -500 ma, i b = -50 ma -0.62 v v be (on) base-emitter on voltage i c = -500 ma, v ce = -1.0 v -1.2 v
bcx17 ? pnp general-purpose amplifier ? 2002 fairchild semiconductor corporation www.fairchildsemi.com bcx17 rev. 1.1.0 3 physical dimensions figure 1. 3-lead, sot23, jedec to-236, low profile (active) package drawings are provided as a servic e to customers considering fairchild co mponents. drawings may change in any manner without notice. please note the revision and/or date on the drawi ng and contact a fairchild semi conductor representative to ver ify or obtain the most recent revision. package specifications do not ex pand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconduct or?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/ma/ma03d.pdf . for current tape and reel specifications, visit fair child semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-ma03d.pdf . land pattern recommendation notes: unless otherwise specified a) reference jedec registration to-236, variation ab, issue h. b) all dimensions are in millimeters. c) dimensions are inclusive of burrs, mold flash and tie bar extrusions. d) dimensioning and tolerancing per asme y14.5m - 1994. e) drawing file name: ma03drev10 3 12 see detail a seating plane scale: 2x gage plane (0.55) (0.93) 1.20 max c 0.10 0.00 0.10 c 2.400.30 2.920.20 1.30 +0.20 -0.15 0.60 0.37 0.20 a b 1.90 0.95 (0.29) 0.95 1.40 2.20 1.00 1.90 0.25 0.23 0.08 0.20 min sot-23
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